首页   按字顺浏览 期刊浏览 卷期浏览 Electron spin resonance in argon‐ion‐implanted silicon
Electron spin resonance in argon‐ion‐implanted silicon

 

作者: Keh‐Chang Chu,   Weiler R. Hurren,   Edward Hale,   John Reigle,  

 

期刊: Journal of Applied Physics  （AIP Available online 1973）
卷期: Volume 44, issue 9  

页码: 4243-4243

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662935

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new paramagnetic center withg= 2.0029 is observed, in bothn‐ andp‐type silicon after they are heavily implanted (higher than 1017ions/cm2) with 150‐keV argon ions.

 

点击下载:  PDF (78KB)



返 回