Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
作者:
D. L. Staebler,
C. R. Wronski,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 6
页码: 3262-3268
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328084
出版商: AIP
数据来源: AIP
摘要:
Long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a‐Si : H). Annealing above ∼150 °C reverses the process. The effect occurs in the bulk of the films, and is associated with changes in density or occupation of deep gap states. High concentrations of P, B, or As quench the effect. Possible models involving hydrogen bond reorientation at a localized defect or electron‐charge transfer between defects are discussed. An example is shown where these conductivity changes do not affect the efficiency of an a‐Si : H solar cell.
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