High hydrogen concentrations produced by segregation intop+layers in silicon
作者:
A. D. Marwick,
G. S. Oehrlein,
M. Wittmer,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 2
页码: 198-200
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105964
出版商: AIP
数据来源: AIP
摘要:
Gallium‐implantedp+layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7×1019/cm3, segregated into thep+layer during treatment at 200 °C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple high‐symmetry sites in the lattice, and electron microscopy revealed the presence of extended {111} stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.
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