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Temperature effect on surface flatness of molecular beam epitaxy homoepitaxial layers grown on nominal and vicinal(111)BGaAs substrates

 

作者: Christelle Guerret-Piecourt,   Chantal Fontaine,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1998)
卷期: Volume 16, issue 1  

页码: 204-209

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.589780

 

出版商: American Vacuum Society

 

关键词: GaAs

 

数据来源: AIP

 

摘要:

For the first time a comparison is made between the surface characteristics of layers simultaneously grown on nominal and on vicinal(111)Bsubstrates under the1×1reconstruction regime which provides flat surfaces for both orientations. The influence of growth temperatures, 600 and 700 °C, on surface characteristics is thoroughly reviewed based on an atomic force microscopy study. This study yields additional insight into results already reported on growth mechanisms occurring along these two orientations for the19×19growth regime. For the nominal(111)Blayers, it will be shown that monoatomic steps at the surfaces define large atomically flat plateaus at both temperatures. At 600 °C, growth will be shown to proceed mainly through the development of two-dimensional nuclei, which are limited in size to a critical value and can coalesce by a proximity effect. These nuclei will be shown to be much smaller at 700 °C, thereby turning the step flow into the main mechanism occurring at that temperature. For the vicinal orientation, monoatomic-stepped and step-bunched surfaces grown at 600 and 700 °C, respectively, will be obtained under our1×1growth conditions, the same as in the19×19regime.

 

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