Nature and parameters of radiation defects in dislocated silicon
作者:
L.A. Kazakevich,
P.F. Lugakov,
期刊:
Radiation Effects
(Taylor Available online 1985)
卷期:
Volume 87,
issue 5
页码: 261-268
ISSN:0033-7579
年代: 1985
DOI:10.1080/01422448608209730
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The radiation defect production and annealing processes in dislocated silicon are analysed. The character of the effect of dislocations on the radiation defect parameters is shown to depend on their nature. Taking into account the dependence determined a scheme is suggested in accordance with which the electrically active defects in Si are divided into four groups. This is useful when identifying defects of unknown nature.
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