Modeling of resist heating for 50‐ and 100‐kVe‐beam exposures of single layer resist on silicon wafers and quartz mask plates is reported. The resist heating from energy dissipation in both the thin resist layer itself and the underlying substrate has been taken into account. A variety of single spot exposure situations are considered to put forward the main features for minimization of thermal effects. Modeling results are compared with experimental results reported in literature. The future perspective for resist heating control in high throughpute‐beam writing is illustrated with a practical example.