Detection of residual photoresist with the atomic force microscope
作者:
C. B. Prater,
P. K. Hansma,
I‐H. Tan,
D. G. Lishan,
E. L. Hu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 3
页码: 1211-1214
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585889
出版商: American Vacuum Society
关键词: ATOMIC FORCE MICROSCOPY;PHOTORESISTS;THICKNESS;SPATIAL RESOLUTION;GALLIUM ARSENIDES;ETCHING;REMOVAL;SENSITIVITY
数据来源: AIP
摘要:
We report the use of the atomic force microscope (AFM) for local measurements of photoresist thickness and for the detection of residual photoresist in semiconductor processing. By scraping the photoresist off a small portion of a sample with the AFM stylus, and then imaging a larger area at low force, we have been able to measure the depth of a residual, photoresist masking layer. In addition, the AFM has been used to qualitatively judge the efficiency of three common methods of removing photoresist: a hot acetone bath left the most residual photoresist, a commercial stripper left less, and an oxygen plasma etch left none under our test conditions.
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