Boron was implanted intop‐type (100) silicon at an energy of 4 MeV to create a layer of heavily doped silicon centered at a depth of 5.2 &mgr;m below the surface. Bothn‐channel andp‐channel metal‐oxide‐silicon, field‐effect transistors (MOSFET’s) and various diode structures were fabricated over this implanted region by using a 3‐&mgr;m complementary MOSFET (CMOS) technology. The results show that the implanted silicon is recrystallized to a device quality state. No increase in diode leakage or degradation in MOSFET device characteristics is observed. Experimental results show that this subdevice buried layer leads to a reduction of CMOS latch‐up susceptibility.