Laser induced deposition of tungsten from WF6on GaAs using a focused continuous wave scanning argon‐ion laser was investigated. Deposits were prepared with H2as a reducing agent, as well as without it. Deposition of tungsten is found to occur in a narrow process window, suggesting the existence of a competing etching reaction. Film composition and structure were analyzed by scanning electron microscopy and Auger electron microscopy. Surface reactions were studied by x‐ray photoelectron spectroscopy. The data suggest that the GaAs surface participates in the reaction with WF6, leading to the formation of GaF3which may poison the initiation of the deposition process.