In a recent article we pointed out the importance of final state effects in the context of Schottky‐barrier measurements by core‐level photoemission. Using a wave vector‐dependent image‐screening model, we concluded that final state effects give a substantial contribution to the estimated Schottky‐barrier height. In the present comment the list of supporting evidence is extended by new experimental work emphasizing the difference in final state screening at metal and semiconductor surfaces. We find that the measured differences are well reproduced by the screening model with similar parameters as used in our earlier discussion of Schottky barriers.