Integration of a taper‐coupled GaAs‐AlxGa1−xAs laser with a linear electro‐optic modulator permits efficient optical frequency modulation of the laser emission. The pulsed room‐temperature threshold current density of the device was 8 kA/cm2. Frequency modulation depth in excess of 15 GHz (corresponding to a wavelength shift of 0.4 A˚) was obtained with a reverse bias change of 20 V across the modulator. Conversion of frequency modulation into intensity modulation was demonstrated with a characteristic powerP0of 10 &mgr;W/MHz for 90% intensity modulation. It is shown that reduction ofP0by an order of magnitude is easily feasible.