The depth profiles of 350‐keV121Sb ions implanted at room temperature into diamonds were determined from neutron‐activation‐layer‐removal experiments. Profiles for both random and aligned (⟨111⟩) implantations were measured. The distribution of antimony ions implanted under channeling conditions was found to be centered somewhat deeper in the crystal than that of Sb ions implanted into a nonaligned diamond. The distribution tail extends in the case of channel implantation far into the crystal, well beyond the region of measurable damage.