Precipitation of SiO2on dislocations in polycrystalline silicon with a high carbon concentration
作者:
A. Gervais,
T. Moudda‐Azzem,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 2
页码: 789-793
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337430
出版商: AIP
数据来源: AIP
摘要:
Transmission electron microscopy (TEM) observations are reported on defects induced in polycrystalline silicon ribbon during the burn‐off of the carbon support and the diffusion process. Ribbon‐shaped silicon crystals are characterized by a high carbon and oxygen content at their solubility limits. TEM investigations show that SiO2is precipitated as either alpha or beta quartz on the dislocation cores during annealing in O2atmosphere.
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