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The effects of high pressure on carbon nitride—in situmeasurements of micro photoluminescence and infrared spectra

 

作者: J. Zhao,   R. Z. Che,   J. R. Xu,   N. Kang,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 21  

页码: 2781-2783

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119057

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effects of high pressure up to 24 GPa on carbon nitride were studied usingin situmicro photoluminescence (PL) and infrared (IR) absorption measurements at room temperature. The experiments indicate pressure-induced PL quenching with pressure increasing from 0 to 7 GPa, but the PL remains unchanged from 7 to 24 GPa. The PL results display the pressure effect of PL enhancement after release of pressure to ambient atmosphere. The IR absorption bands broaden toward low frequency after release of pressure. These may be explained by using the PL model of undistorted sp2clusters, which, as PL centers, undergo distortion under pressure and pressure-induced local atomic rearrangement in the sample. ©1997 American Institute of Physics.

 

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