Silicon films were deposited when silane was irradiated with a pulsed CO2laser. This laser‐induced vapor deposition occurs effectively when the laser is tuned to an absorption frequency of SiH4. Efficiency was so high that an unfocused beam of 1.3 MW/cm2sufficed. Any thermal effects are ruled out. Deposition is induced efficiently at gas pressures above 100 Torr, indicating that a collision‐aided process is involved.