Mapping the quality of semiconductor wafers
作者:
J. I. Pankove,
J. E. Berkeyheiser,
期刊:
Review of Scientific Instruments
(AIP Available online 1986)
卷期:
Volume 57,
issue 4
页码: 674-679
ISSN:0034-6748
年代: 1986
DOI:10.1063/1.1138888
出版商: AIP
数据来源: AIP
摘要:
A new instrument has been developed to map the photovoltaic response of a semiconductor to very penetrating sub‐band‐gap radiation (for silicon, &lgr;=1.3 &mgr;m). The minority carrier density being nearly uniform throughout the thickness of the crystal, the photovoltaic response is dominated by the carrier diffusion length and thus reflects the quality of the material. A computer‐controlled scan of the semiconductor presents a map of the gross quality of the specimen. The actual probe is a small transparent electrode (water) illuminated by an optical fiber carrying 1.3‐&mgr;m light from an LED.
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