AbstractThe applicability of the Hi‐BiCMOS (High Performance Bipolar CMOS) technology to the 32‐bit execution unit has been researched to improve the function and speed of such processors as minicomputers CPUs. The HiBiCMOS technology enables MOS devices with performance comparable to pure CMOS LSIs and bipolar devices with performance comparable to pure bipolar LSIs to be combined on the same substrate. Device integrations comparable to CMOS LSIs have been achieved by the utilization of macrocells composed mainly of MOS circuits. Attempts have been made to speed‐up the macrocells by adding Hi‐BiCMOS circuits.In this paper, the feedback‐type smallamplitude precharge circuit is proposed and fabricated. This circuit affords precise bus voltage. Also, the carry propagation circuit that uses the bipolar sense amplifier to achieve the machine cycle of 25 ns is proposed. Consequently it is confirmed that the precharge circuit operates two times faster and the carry propagation circuit 3.3 times faster than pure CMOS circuits. Thus, one of the promising candidates for the ultrahigh‐speed one‐chip proces