The use of the interbase resistance of the unijunction transistor as a thermometer in the 20–300 K range
作者:
R. Janik,
J. N. Lechevet,
W. D. Gregory,
期刊:
Review of Scientific Instruments
(AIP Available online 1974)
卷期:
Volume 45,
issue 11
页码: 1456-1457
ISSN:0034-6748
年代: 1974
DOI:10.1063/1.1686526
出版商: AIP
数据来源: AIP
摘要:
We have investigated the interbase resistances of 12 General Electric 2N2646 unijunction transistors between 20 and 300 K. Although the resistance is not a single‐valued function of temperature, the heavily n‐doped silicon chip is an inexpensive thermometer of high sensitivity that is free of thermal cycling or current dependent effects. Its small thermal mass makes it well suited for measurements such as specific heat.
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