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The use of the interbase resistance of the unijunction transistor as a thermometer in the 20–300 K range

 

作者: R. Janik,   J. N. Lechevet,   W. D. Gregory,  

 

期刊: Review of Scientific Instruments  (AIP Available online 1974)
卷期: Volume 45, issue 11  

页码: 1456-1457

 

ISSN:0034-6748

 

年代: 1974

 

DOI:10.1063/1.1686526

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated the interbase resistances of 12 General Electric 2N2646 unijunction transistors between 20 and 300 K. Although the resistance is not a single‐valued function of temperature, the heavily n‐doped silicon chip is an inexpensive thermometer of high sensitivity that is free of thermal cycling or current dependent effects. Its small thermal mass makes it well suited for measurements such as specific heat.

 

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