Data are presented showing limited layer disordering (or intermixing) of S‐diffused Se‐doped or C‐doped AlxGa1−xAs‐GaAs superlattices. The S diffusion is characterized via secondary‐ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column‐III‐site atoms (Al&rlarr2;Ga) as well as minimal displacement of the column‐V‐site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native‐defect vacancy‐assisted disordering (vacancyVIII).