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A model of hole trapping inSiO2films on silicon

 

作者: P. M. Lenahan,   J. F. Conley,   B. D. Wallace,  

 

期刊: Journal of Applied Physics  （AIP Available online 1997）
卷期: Volume 81, issue 10  

页码: 6822-6824

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365438

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate that hole trap densities and hole trapping inSiO2films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. ©1997 American Institute of Physics.

 

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