X‐ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates
作者:
J. Chaudhuri,
R. Thokala,
J. H. Edgar,
B. S. Sywe,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 12
页码: 6263-6266
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359158
出版商: AIP
数据来源: AIP
摘要:
A detailed double crystal x‐ray diffractometry study of epitaxial AlN thin films grown on sapphire, silicon and silicon carbide substrates was carried out to compare the structure, residual stress and defect concentration in these thin films. The structure of AlN is wurtzite with a small distortion in lattice parameters. This results in a small residual stress of the order of 109dynes/cm2in the film and can be accounted for from the difference in thermal expansion coefficients between the film and substrate. Both the x‐ray and transmission electron microscopy measurements indicate a low defect density in the AlN thin film grown on 6H‐SiC substrate which could be attributed to the small difference in lattice parameters between AlN and 6H‐SiC. ©1995 American Institute of Physics.
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