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Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices

 

作者: H. C. Hamaker,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 58, issue 6  

页码: 2344-2351

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335957

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effects of inhomogeneous doping and/or composition profiles in the active regions of AlGaAs/GaAs heteroface solar cells have been studied using a realistic computer model. It is found that forn‐pdevices with moderate surface recombination velocitiesS, only modest improvements in the cell efficiency are obtained by including linear or exponential profiles. Such gradients become more valuable, however, whenever (1)Sincreases, (2) the solar illumination is increased through concentration, or (3) ap‐ndevice is desired.

 

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