Periodic submicrometer dot structures onn‐GaAs substrates fabricated by laser‐induced surface electromagnetic wave etching
作者:
H. Kumagai,
M. Ezaki,
K. Toyoda,
M. Obara,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 4
页码: 1971-1974
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353161
出版商: AIP
数据来源: AIP
摘要:
Periodic submicrometer dot structures were fabricated by laser‐induced surface electromagnetic wave (SEW) etching ofn‐GaAs substrates using the holographic exposure system of the frequency‐tripled Nd:YAG laser. The shorter and longer diameters were about 310 and 540 nm, respectively. Spatial periods along two perpendicular axes were 370 and 545 nm, respectively. These periods were nearly in agreement with the calculation. The period of SEW grating depended on not only the laser wavelength, but also the number density of the laser‐induced quasifree carriers.
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