Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In‐plane epitaxial relation and channeling analysis
作者:
Chin‐An Chang,
Joyce C. Liu,
Joseph Angilello,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 21
页码: 2239-2240
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103902
出版商: AIP
数据来源: AIP
摘要:
The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be needed for the lattice match. Such an epitaxial relation is confirmed by the grazing angle x‐ray diffraction, with the [010] of Cu parallel to the [011] of Si. The channeling analysis of a 2‐&mgr;m‐thick Cu film shows a 10% minimum near the surface.
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