Nb‐Ge films, which have been prepared by chemical vapor deposition, have been studied for superconducting transition temperatures, crystal structures, and growth morphology. In the films a relationship was obtained among positions at which the highestTcfilms are deposited, the degree of orientation forA15 crystallites is lowered, and the microstructures for film surface change has been found. This can be explained in terms of a higher deposition rate of Ge than that of Nb.