Structure and chemical composition of water‐grown oxides of GaAs
作者:
Z. Liliental‐Weber,
C. W. Wilmsen,
K. M. Geib,
P. D. Kirchner,
J. M. Baker,
J. M. Woodall,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 4
页码: 1863-1867
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345614
出版商: AIP
数据来源: AIP
摘要:
Previously it has been shown that the electronic surface properties of GaAs can be improved by photochemical treatment in water. If this photowashing technique is carried out with intense white light, oxides several hundred angstroms thick can be grown. This paper reports the structure and composition of this photowashed oxide and one grown by soaking in stagnant water in low light. The oxide was determined by TEM cross sections to be highly porous, but with thin continuous oxide layers both at the surface and at the oxide/GaAs interface. The oxide is composed of Ga2O3with a low concentration of As2O3. The layer is primarily a fine grain Ga oxide crystal with a structure which appears different from the common forms of Ga2O3.
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