External self-gettering of nickel in float zone silicon wafers
作者:
N. Gay,
S. Martinuzzi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 19
页码: 2568-2570
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118921
出版商: AIP
数据来源: AIP
摘要:
During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni–Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source. ©1997 American Institute of Physics.
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