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Atomic collisions in semiconductors

 

作者: R. Smith,   R.P. Webb,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1994）
卷期: Volume 130-131, issue 1  

页码: 433-445

 

ISSN:1042-0150

 

年代: 1994

 

DOI:10.1080/10420159408219801

 

出版商: Taylor & Francis Group

 

关键词: semiconductors;many-body potentials;implantation;damage;sputtering

 

数据来源: Taylor

 

摘要:

Energetic particle bombardment of semi-conductors (SiandGaAs) is studied by means of Molecular Dynamics simulations using many-body potentials. The simulations show that the diamond lattice structures can lead to the trajectories of particles within the crystal being channelled even at low energies. Some results concerning damage production, low energy implantation profiles and angular distributions of ejected particles are presented.

 

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