p‐ ton‐type conversion in GaSb by ion beam milling
作者:
G. N. Panin,
P. S. Dutta,
J. Piqueras,
E. Dieguez,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 24
页码: 3584-3586
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115325
出版商: AIP
数据来源: AIP
摘要:
Inversion in conductivity type of GaSb fromp‐ ton‐ has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as‐grown samples. ©1995 American Institute of Physics.
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