Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
作者:
S. J. Rosner,
E. C. Carr,
M. J. Ludowise,
G. Girolami,
H. I. Erikson,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 420-422
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118322
出版商: AIP
数据来源: AIP
摘要:
We discuss the relationship between microstructure and luminescence efficiency for heteroepitaxial films of GaN grown onc-axis sapphire substrates by metalorganic chemical-vapor deposition. We directly characterize the correlation between threading dislocations as observed by transmission electron microscopy, surface morphology as observed by atomic force microscopy, and wavelength-resolved cathodoluminescence imaging. We show that the inhomogeneity in the luminescence intensity of these films near band edge can be accounted for by a simple model where nonradiative recombination at threading dislocations causes a deficiency of minority carriers and results in dark regions of the epilayer. An upper bound for average diffusion length is estimated to be 250 nm. ©1997 American Institute of Physics.
点击下载:
PDF
(364KB)
返 回