Study of composition and critical-point broadening inInAs/Ga1−xInxSb superlattices using spectroscopic ellipsometry
作者:
J. Wagner,
J. Schmitz,
N. Herres,
G. Tra¨nkle,
P. Koidl,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 11
页码: 1456-1458
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118560
出版商: AIP
数据来源: AIP
摘要:
InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy were studied by spectroscopic ellipsometry. The pseudodielectric function of InAs/GaSb SLs could be fitted using modified bulk dielectric functions of InAs and GaSb with pronounced energy shifts and broadening of critical-point resonances. These changes in the dielectric functions of the constituent layers can be explained only in part by pseudomorphic strains, therefore providing evidence for thin-layer critical-point broadening and quantum confinement effects. For InAs/(GaIn)Sb SLs, the extremum in the pseudodielectric function derived from theE1critical point of (GaIn)Sb was found to shift to lower energies with increasing In content, and thus can be used as a probe for the composition of the (GaIn)Sb SL layers. ©1997 American Institute of Physics.
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