Wavelength shifting in GaAs quantum well lasers by proton irradiation
作者:
H. H. Tan,
C. Jagadish,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 18
页码: 2680-2682
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120177
出版商: AIP
数据来源: AIP
摘要:
Proton irradiation followed by rapid thermal annealing was used to selectively induce layer intermixing and thus shift the emission wavelengths of GaAs–AlGaAs graded-index separate-confinement-heterostructure quantum well lasers. Up to 40 nm shifts were observed in 4 &mgr;m ridge waveguide devices irradiated to a dose of1.5×1016 cm−2.Although the wavelength shifts were accompanied by some degradation in the lasing threshold current and differential quantum efficiency, they were still quite acceptable at moderate wavelength shifts. This technique provides a simple and promising postgrowth process of integrating lasers of different wavelengths for wavelength-division-multiplexing applications. ©1997 American Institute of Physics.
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