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Reactive ion stream etching utilizing electron cyclotron resonance plasma

 

作者: Toshiro Ono,   Masatoshi Oda,   Chiharu Takahashi,   Seitaro Matsuo,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 3  

页码: 696-700

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583599

 

出版商: American Vacuum Society

 

关键词: ION COLLISIONS;ETCHING;DAMAGE;ELECTRON CYCLOTRON−RESONANCE;EV RANGE 10−100;POLYCRYSTALS;SILICON;MOLYBDENUM;MAGNETIC FIELDS;SILICA;CHLORINE COMPOUNDS;Si;Mo

 

数据来源: AIP

 

摘要:

Reactive ion stream etching has been developed for highly accurate etching with little bombardment induced damage by utilizing an electron cyclotron resonance (ECR) plasma. The ion energy during etching is controlled by utilizing the interaction between the ECR plasma and a divergent magnetic field, in a low energy range from 20 to 50 eV at low gas pressures of 10−2Pa. Highly accurate submicron patterns of polysilicon and molybdenum were obtained with high selectivities to SiO2, larger than 30, by using Cl2gas as the main etching gas.

 

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