Process stability of ferroelectric PLZT thin film sputtering for FRAM® production
作者:
K. Suu,
N. Tani,
F. Chu,
G. Hickert,
T.D. Hadnagy,
T. Davenport,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 9-19
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215605
出版商: Taylor & Francis Group
关键词: ferroelectric capacitors;process stability
数据来源: Taylor
摘要:
(PbLa)(Zr,Ti)O3(PLZT) thin films were fabricated by RF magnetron sputtering. Aiming at process development for FRAM® production, PLZT films were deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rate was realized at relatively low sputtering power by utilizing a high-density PLZT target. Precise compositional control was achieved by controlling sputtering condition. A non-stop 1000-wafer deposition was performed showing high process stability in terms of both deposition rate and ferroelectric properties.
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