Annealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization
作者:
Shan Sun,
Yongmei Wang,
PaulA. Fuierer,
BruceA. Tuttle,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 23,
issue 1-4
页码: 25-43
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908210138
出版商: Taylor & Francis Group
关键词: Ferroelectric films;internal bias;depolarization;hysteresis;asymmetry
数据来源: Taylor
摘要:
Asymmetric switching properties were measured and quantified in sol-gel derived PZT thin films. The hysteresis asymmetry is attributed to the presence of an internal bias field that has been correlated with the self-polarization during fabrication. Annealing the sample under a remanent polarization with the polarity opposite to that of self polarization can yield a partially compensated, completely canceled, or even a reversed internal bias, depending on the annealing temperature. Three dominant processes associated with charge trapping at elevated temperatures are clarified and correlated with the annealing effects. They are aging, de-aging, and the redistribution of trapped charges. A model using simplified domain configurations is proposed to explain the observed annealing effects on hysteresis asymmetry and switchable polarization.
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