Depth distributions, range‐energy curves, and the Pearson IV moments are given for Cr implantation into crystalline GaAs and Si as a function of ion energy from 40 to 600 keV at 4×1013cm−2fluence, and as a function of ion fluence from 4×1012to 2×1016cm−2at 300‐keV ion energy. The nature of the redistribution of these Cr profiles upon annealing at 840 °C for 20 min in both GaAs and in Si are shown and agree qualitatively in the two materials. Two general types of redistribution occur for 4×1013cm−2fluence, one for ion energies below and one for energies above about 100 keV.