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Possibilities of the formation of carbides and borides by ion implantation

 

作者: G. Dienel,   K. Hohmuth,   C. P.O. Treutler,  

 

期刊: Radiation Effects  (Taylor Available online 1982)
卷期: Volume 63, issue 1-4  

页码: 67-71

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208222827

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

In the system of boron and carbon, the formation of boron carbide was investigated after ion implantation of 25 keV B ions into carbon or of 25 keV C ions into boron and subsequent annealing. TEM and electron diffraction studies showed that the crystallization of boron carbide begins only at temperatures above 1050°C. By implantation of 20 keV C ions into iron (ion dose 1017C ions/cm2) only the metastable ε-Fe2O will be generated, which at above 220°C transforms into the stable cementite Fe3C. After implantation of 20 keV B ions into iron, no formation of iron boride could be found. These experimental facts can be understood qualitatively with the help of the thermal-spike model. The energy density or the temperature in the thermal spikes is not sufficient for the generation of cementite iron boride or boron carbide.

 

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