Possibilities of the formation of carbides and borides by ion implantation
作者:
G. Dienel,
K. Hohmuth,
C. P.O. Treutler,
期刊:
Radiation Effects
(Taylor Available online 1982)
卷期:
Volume 63,
issue 1-4
页码: 67-71
ISSN:0033-7579
年代: 1982
DOI:10.1080/00337578208222827
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
In the system of boron and carbon, the formation of boron carbide was investigated after ion implantation of 25 keV B ions into carbon or of 25 keV C ions into boron and subsequent annealing. TEM and electron diffraction studies showed that the crystallization of boron carbide begins only at temperatures above 1050°C. By implantation of 20 keV C ions into iron (ion dose 1017C ions/cm2) only the metastable ε-Fe2O will be generated, which at above 220°C transforms into the stable cementite Fe3C. After implantation of 20 keV B ions into iron, no formation of iron boride could be found. These experimental facts can be understood qualitatively with the help of the thermal-spike model. The energy density or the temperature in the thermal spikes is not sufficient for the generation of cementite iron boride or boron carbide.
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