The forward bias and reverse bias current‐voltage characteristics of some gold‐epitaxial CdTe‐on‐InSb Schottky diodes have been measured at room temperature. Series resistance is evident in undoped material (base electron concentration ∼1014cm−3) which has been measured and corrected for and identified as arising from the reverse biased CdTe‐InSb junction. Two straight lines of differing slopes are present in the semilog plots for all the diodes, which we interpret as a bias‐dependent barrier height. The two barrier heights, 0.91±0.04 eV and 0.74±0.02 eV, are well known in the Au‐CdTe system, from which we conclude that two discrete states are present at the CdTe‐Au interface. The occupancy of the states is determined by the applied bias, and hence the barrier height changes. ©1995 American Institute of Physics.