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Method for measuring contact resistance immediately after metal deposition

 

作者: T. J. Faith,   J. J. O’Neill,   R. S. Irven,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 4  

页码: 837-840

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583522

 

出版商: American Vacuum Society

 

关键词: SILICON;METALLIZATION;SURFACE CLEANING;MEASURING METHODS;SENSITIVITY;ALUMINIUM;SURFACE CONDUCTIVITY;CONTACT POTENTIAL;ELECTRIC CONDUCTIVITY;METAL−SEMICONDUCTOR CONTACTS;Al(Si)

 

数据来源: AIP

 

摘要:

Modifications have been made on a contact‐resistance‐monitor (CRM) process which permit measurements to be made immediately after metal deposition, i.e., without photolithographic metal patterning. The modified or prepatterned CRM has been calibrated versus the standard CRM, and shown to have equal sensitivity to sputter‐deposition system cleanliness. The sensitivity of the CRM method for monitoring system cleanliness has been shown to be approximately the cube of the sensitivity of residual‐gas‐analyzer methods.

 

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