Ferroelectric SrBi2Ta2O9thin films were synthesized on Pt/Ti/SiO2/Si substrates using a solution deposition process, and structural and electrical properties were investigated. The spin‐on films crystallized during firing above 700 °C. The films showed high diffraction peaks of (105) and (200), while little peaks from (00l) planes were observed. Good ferroelectric properties were obtained for a 280 nm thick film;PrandEcwere 10.0 &mgr;C/cm2and 38 kV/cm, respectively. Fatigue endurance was excellent; the hysteresis loop does not change up to 109switching cycles. These properties are very attractive for nonvolatile memory application. ©1995 American Institute of Physics.