Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy
作者:
Osamu Ueda,
Kiyohide Wakao,
Satoshi Komiya,
Akio Yamaguchi,
Shoji Isozumi,
Itsuo Umebu,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 11
页码: 3996-4002
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335576
出版商: AIP
数据来源: AIP
摘要:
Catastrophically degraded InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x‐ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of 〈110〉 dark‐line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of 〈110〉 dark‐line defects from the defects inside the stripe region. These 〈110〉 dark‐line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double‐heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double‐heterostructure lasers are rather similar to those in GaAlAs/GaAs double‐heterostructure lasers concerning the catastrophic degradation.
点击下载:
PDF
(615KB)
返 回