For the next generation of semiconductor devices, new metal deposition technologies (such as Cu and Ti chemical vapor deposition) are being developed. As very large‐scale integrated fabrication becomes more highly integrated, the size of contact/via holes must shrink, producing higher aspect ratios. These geometries create major difficulties in obtaining acceptable step coverage of the barrier/glue layer within the contact/via holes. A new technology has been developed, called long‐throw sputter (LTS), for achieving acceptable step coverage particularly for geometries below 0.5 μm without employing collimators in the system. LTS (patent pending) provides more than 40% bottom coverage of barrier metal films in 0.35 μm contact holes with 3.0 aspect ratio while maintaining a high deposition rate and acceptable film uniformity. Additionally, LTS may facilitate Al alloy flow and/or reflow application.