Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y‐Ba‐Cu‐O
作者:
R. Ramesh,
A. Inam,
W. K. Chan,
F. Tillerot,
B. Wilkens,
C. C. Chang,
T. Sands,
J. M. Tarascon,
V. G. Keramidas,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 27
页码: 3542-3544
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105651
出版商: AIP
数据来源: AIP
摘要:
We have fabricated epitaxial ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7−xheterostructures on single crystalline [001] LaAlO3. Only the (00l) peaks of the PbZr0.2Ti0.8O3(PZT) film are observed, indicating that the epitaxial,c‐axis oriented YBCO film is a good structural template for the heteroepitaxial growth of PZT films, in addition to being a metallic bottom electrode. A saturation polarization and remanence as high as 38 and 26.5 &mgr;C/cm2(at 7.5 V, 0.5 kHz), respectively, have been achieved. The coercive field is about 100 kV/cm.
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