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Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y‐Ba‐Cu‐O

 

作者: R. Ramesh,   A. Inam,   W. K. Chan,   F. Tillerot,   B. Wilkens,   C. C. Chang,   T. Sands,   J. M. Tarascon,   V. G. Keramidas,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 27  

页码: 3542-3544

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105651

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated epitaxial ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7−xheterostructures on single crystalline [001] LaAlO3. Only the (00l) peaks of the PbZr0.2Ti0.8O3(PZT) film are observed, indicating that the epitaxial,c‐axis oriented YBCO film is a good structural template for the heteroepitaxial growth of PZT films, in addition to being a metallic bottom electrode. A saturation polarization and remanence as high as 38 and 26.5 &mgr;C/cm2(at 7.5 V, 0.5 kHz), respectively, have been achieved. The coercive field is about 100 kV/cm.

 

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