Ohmic contacts with low resistance are fabricated onn‐type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP‐MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017to 1.7×1019cm−3. The lowest value for the specific contact resistivity of 6.5×10−5&OHgr; cm2is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. ©1996 American Institute of Physics.