A Monte-Carlo-program has been used to study the channelling process in NbC-single crystals implanted with C-ions at 830°C. The dechannelling yields measured in the ⟨110⟩-direction separately for the Nb- and the C-sublattice are compared to calculated results. In the calculation two defect models (statistically displaced C-atoms and stacking faults) were applied and the characteristic parameters for these models were varied in order to reproduce the behavior of the experimental spectra. The best agreement was obtained by assuming a defect structure consisting of stacking faults with a Burger's vector ofa/6 [112] and a stacking fault length of 7 nm. The analyzing ion beam energy was varied in the cal- culation and the expected energy independence of the dechannelling yield for stacking faults was found which lies in reasonable agreement with the experimental values.