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Hydrogen Incorporation in Amorphous Germanium

 

作者: A. J. Lewis,   G. A. N. Connell,   W. Paul,   J. R. Pawlik,   R. J. Temkin,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1974）
卷期: Volume 20, issue 1  

页码: 27-32

 

ISSN:0094-243X

 

年代: 1974

 

DOI:10.1063/1.2945975

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A series of hydrogenated amorphous Ge films was prepared at 25°C. The effect on the electronic properties of incorporating H is found to be similar to that of growth at elevated temperatures or anneal of pure films. From this we conclude that most of the states in the pseudogap are attributable to dangling bonds.

 

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