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Chemical sputtering yields of silicon resulting from F+, CFn+ (n= 1,2,3) ion bom...
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Chemical sputtering yields of silicon resulting from F+, CFn+ (n= 1,2,3) ion bombardment
作者:
Kiyoshi Miyake,
Shin’ichi Tachi,
Kunihiro Yagi,
Takashi Tokuyama,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 4
页码: 3214-3219
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.331021
出版商: AIP
数据来源: AIP
摘要:
Chemical sputtering yields of crystalline silicon resulting from mass‐separated, reactive ion bombardments are measured as a function of ion kinetic energy at room temperature. Ions of F+and CFn+(n= 1,2,3) are bombarded independently onto a silicon surface in an ultrahigh vacuum (UHV) environment. Evolution rate of SiF4molecules resulting from surface chemical reaction: Si+4F→SiF4↑, is measured using a quadrupole mass filter. For F+/Si ion bombardment, yield increases monotonically with ion kinetic energy and saturates at 1 keV giving a value of 0.18. For CFn+/Si ion bombardment, yields show maxima at 1200 eV (CF+), 800 eV (CF2+) and 700 eV (CF3+). At ion energy ranges above 1.5 keV, yields for CFn+/Si are about half that for F+/Si. Carbon deposition and scavenging effects are discussed in detail by relating with fluorocarbon ion bombardment.
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