We report an investigation of trapped positive charge in as‐fabricated plasma‐enhanced chemical vapor deposited SiO2films using electrical and spin resonance techniques. We show that the positive charge results from donor‐like ‘‘slow’’ interface states (‘‘anomalous positive charge’’) rather than trapped holes, and that most (∼95%) of the positive charge is not related toE’centers. The positive charge is similar to that seen in electron‐injected thermally grown SiO2, and unlike radiation‐induced trapped holes.