Ferroelectric properties of plzt thin films prepared by mocvd
作者:
Koji Tominaga,
Yukio Sakashita,
Masaru Okada,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 5,
issue 4
页码: 287-291
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408223885
出版商: Taylor & Francis Group
关键词: PLZT thin film;MOCVD;leakage current;fatigue
数据来源: Taylor
摘要:
Lanthanum-modified lead zirconate titanate (PLZT) thin films have been grown on Pt/SiO2/Si substrate at 650[ddot]C by metalorganic chemical vapor deposition. The relative dielectric constant increased as the La content was increased up to about 5 atomic percent (at%). The remanent polarization and coercive field decreased from 30 to 20 μC/cm2and from 53 to 30 kV/cm, respectively, with increasing La content in the range of 0–13 at%. The leakage current of PLZT film was 3 × 10−9A/cm2at an applied voltage of 3 V. The degradation of switched charge density of PLZT film was not observed even at 2 × 1011cycles.
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