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Ion implantation as a tool for controlling the morphology of porous gallium phosphide

 

作者: I. M. Tiginyanu,   C. Schwab,   J.-J. Grob,   B. Pre´vot,   H. L. Hartnagel,   A. Vogt,   G. Irmer,   J. Monecke,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 26  

页码: 3829-3831

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120518

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate the morphology of porous layers obtained by electrochemical anodization of (100)-orientedn-type GaP substrates before and after a preliminary 5-MeVKr+implantation. Apart from favoring the observation of a surface-related phonon in the frequency gap between the bulk optical phonons, ion implantation appears to be an effective means of controlling the morphology of porous GaP, irrespective of initial substrate material features. ©1997 American Institute of Physics.

 

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